Integration of nonlinear optical polymer waveguides with InGaAs p-i-n photodiodes
Identifieur interne : 019E79 ( Main/Repository ); précédent : 019E78; suivant : 019E80Integration of nonlinear optical polymer waveguides with InGaAs p-i-n photodiodes
Auteurs : RBID : Pascal:97-0370938Descripteurs français
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Abstract
Performance requirements for systems employing optical guided wave components may be satisfied more easily through the hybrid integration of nonlinear optical (NLO) polymers and semiconductors. Reported in this letter, is the integration of NLO polymer waveguides with InGaAs p-i-n photodetectors at 1.3 μm, with coupling efficiencies greater than 99% and system responsivities of 0.84 A/W. An analysis of the structure using a two-dimensional beam propagation model was performed. Planarization was maintained and the design allows for further integration of optoelectronic components. © 1996 American Institute of Physics.
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<front><div type="abstract" xml:lang="en">Performance requirements for systems employing optical guided wave components may be satisfied more easily through the hybrid integration of nonlinear optical (NLO) polymers and semiconductors. Reported in this letter, is the integration of NLO polymer waveguides with InGaAs p-i-n photodetectors at 1.3 μm, with coupling efficiencies greater than 99% and system responsivities of 0.84 A/W. An analysis of the structure using a two-dimensional beam propagation model was performed. Planarization was maintained and the design allows for further integration of optoelectronic components. © 1996 American Institute of Physics.</div>
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<fC01 i1="01" l="ENG"><s0>Performance requirements for systems employing optical guided wave components may be satisfied more easily through the hybrid integration of nonlinear optical (NLO) polymers and semiconductors. Reported in this letter, is the integration of NLO polymer waveguides with InGaAs p-i-n photodetectors at 1.3 μm, with coupling efficiencies greater than 99% and system responsivities of 0.84 A/W. An analysis of the structure using a two-dimensional beam propagation model was performed. Planarization was maintained and the design allows for further integration of optoelectronic components. © 1996 American Institute of Physics.</s0>
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